News: Microelectronics
14 June 2021
Navitas showcasing GaN power ICs at APEC
At the virtual Applied Power Electronics Conference (APEC 2021) on 14–17 June, Navitas Semiconductor Inc of El Segundo, CA, USA and Dublin, Ireland is showcasing its GaN power ICs.
Gallium nitride (GaN) is reckoned to run up to 20x faster than legacy silicon and enables up to 3x more power or 3x faster charging in half the size and weight, with up to 40% energy savings. Founded in 2014, Navitas introduced what it claimed to be the first commercial GaN power ICs. GaNFast power ICs monolithically integrate GaN power field-effect transistors (FETs) and drive plus protection and control circuits, enabling faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. From fast chargers to electric vehicles (EVs) and from data-center equipment to solar energy, GaN power ICs are replacing legacy silicon semiconductors in designs from 20W to 20kW+ as designers look to improve system performance while driving down power consumption and reducing greenhouse-gas emissions, says the firm.
Navitas says that, with over 20 million GaN power ICs shipped and zero confirmed field-use failures, GaNFast technology is a proven platform for higher-power platforms.
Projected to address markets valued at over $13bn by 2026, GaN has the potential to reduce CO2 emissions by up to 2.6Gtons annually by 2050 to help achieve the climate goals of the Paris Accord.
At APEC, Navitas is highlighting its partnerships with companies including Dell, Lenovo, OPPO, Xiaomi and LG, all of whom have developed high-efficiency, high-power-density fast chargers for smartphones or laptops using Navitas technology. The ‘virtual’ booth contains links to deeper technical information on all of these applications, including the very latest 100W Baseus phone/laptop charger that can charge smartphones from zero to 50% in just five minutes.
Among the devices showcased at APEC are the NV6128, the company’s most recent high-power GaNFast IC, which offers 650V/800V nominal/peak operation in a compact 6mm x 8mm PQFN package.
“Engineers trying to design next-generation, energy-saving and high-density power systems are finding that legacy silicon and early ‘discrete’ GaN can’t help them,” says Stephen Oliver, VP of corporate marketing & investor relations. “GaNFast power ICs, with fully integrated power, drive, control & protection, unlock the full promise of wide bandgap technology,” he adds. “Taking part in APEC allows us to show visitors state-of-the-art GaN power IC design and applications, and give them access to experts with experience in how to best deploy these technologies across a variety of applications.”
Navitas is presenting next-generation power solutions in the following presentations:
- IS02 ‘Gallium Nitride’s Penetration into the Power Silicon Market’, by David Carroll, senior VP worldwide sales - 14 June (10.30pm EST);
- IS06 ‘Pulsed ACF for Low-Profile GaN Fast Chargers’ by Xiucheng Huang, senior director, applications engineering and Stephen Oliver, VP corporate marketing & IR - on-demand, plus live Q&A 14 June (5pm EST);
- IS13 ‘300W Multi-Mode Totem-pole PFC Using GaN Power ICs’, by Tom Ribarich, senior director strategic marketing and Liming Ye, principal applications engineer – on-demand, plus live Q&A 16 June (5pm EST);
- ES41 – Gallium Nitride (GaN): ‘Electrify Our World’, by Stephen Oliver, VP corporate marketing & investor relations - on-demand (only).
Navitas to go public via Live Oak II
Navitas powers Baseus GaN2 100W charger
Navitas GaNFast power ICs used in fast charger for Lenovo’s new Xiaoxin and YOGA laptops
Navitas’ GaNFast power ICs adopted by LG for lightest laptop
