News: Microelectronics
3 February 2021
JEDEC WBG Power Semiconductor Committee publishes first guideline for SiC-based devices
The JEDEC Solid State Technology Association (which develops standards for the microelectronics industry) has published ‘JEP183: Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs’. The first publication developed by JEDEC’s JC-70.2 silicon carbide subcommittee, JEP183 is available for free download from the JEDEC website.
JEP183 addresses the critical topic of accurately measuring the threshold voltage (VT) of silicon carbide metal-oxide-semiconductor field-effect transistors, addressing the unique behavior of SiC MOSFETs.
The threshold voltage test methods provided in JEP183 can be used as a common industry guideline for measuring VT of SiC power devices, focused on N-channel vertical-structure MOSFET technologies, providing a common baseline for the SiC MOSFET market. For flexibility, three test methods are offered that may be applied for datasheet, process control, technology development, final tests and other usage. Threshold voltage is a key parameter in the evaluation of changes in the characteristics of physical stimulus such as voltage and/or temperature stress. Without accurately measuring VT, it is not possible to monitor how device characteristics are changed by the stress applied to a device. The SiC/SiO2 interface of a SiC MOSFET is more complex than a Si/SiO2 interface, requiring careful handling of traps in the device with regard to the change monitoring of characteristics.
“JEP183 recommends approaches for precise and repeatable measurements of SiC MOSFET VT, which will help ensure successful implementation of SiC devices in automotive and industrial markets,” notes JC-70.2 subcommittee chair Dr Jeffrey Casady, Power Die Product Marketing Engineering Manager at Wolfspeed (a Cree Company).
“With this first SiC-related document we are kicking off a series of guidelines addressing the needs of the industry to work on commonly aligned standards,” says JC-70.2 subcommittee vice-chair Dr Peter Friedrichs, vice president SiC, at Infineon Technologies.
Formed in October 2017 with 23 member companies, JC-70 now has over 60 member companies, underscoring industry commitment to the development of universal standards to help advance the adoption of wide-bandgap (WBG) power technologies. Global multi-national corporations and technology startups from the USA, Europe, Middle East and Asia are working together to bring to the industry a set of standards for reliability, testing and parametrics of WBG power semiconductors. Committee members include industry leaders in power GaN and SiC semiconductors, as well as users of wide-bandgap power devices, and test & measurement equipment suppliers. Technical experts from universities and national labs also provide input.
JEDEC says that interested companies worldwide are welcome to join it to participate in this standardization effort. The next JC-70 committee meeting will be held on 16 February on a virtual platform.
JEDEC wide-bandgap power semiconductor committee publishes first document
www.jedec.org/document_search?search_api_views_fulltext=jep183
