1 March 2017

Mitsubishi Electric launches SiC Schottky barrier diode incorporating junction-barrier Schottky

Tokyo-based Mitsubishi Electric Corp has launched a silicon carbide Schottky barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems etc. In line with the growing demand for energy-efficiency in such systems, consumers are increasingly choosing products that incorporate SiC-SBDs, says the firm.

The use of silicon carbide yields improved energy conversion, resulting in about 21% less power loss compared with silicon products, reckons Mitsubishi Electric. It also enables high-speed switching and downsizing of peripheral components, the firm adds. 

In addition, by combining a Schottky barrier with p-n junction, the junction-barrier Schottky (JBS) structure helps to achieve improved reliability.

The BD20060T (in a 10.1mm×29.0mm×4.7mm TO-220 package) is shipping from 1 March; the BD20060S (in a 15.9mm×41.0mm×5.0mm TO-247 package) will ship from 1 September. With a specification of 20A/600V, surge non-repetitive forward current is 155A (8.3ms, sine wave) and diode forward voltage is 1.35V.

Development of the new products was supported partially by Japan’s New Energy and Industrial Technology Development Organization (NEDO).

Tags: Mitsubishi Electric SiC Schottky barrier diodes

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