8 May 2015

Fairview launches family of LNA and high-power X-band amplifiers

Fairview Microwave Inc of Allen, TX, USA, which supplies on-demand microwave and RF components, has launched a new family of coaxial low-noise amplifiers (LNA) and high-power X-band amplifiers.
Such RF amplifiers are commonly used in front-end receivers and as driver amplifiers or high-power output amplifiers for applications at X-band frequencies such as commercial and military radar systems, satellite communication systems, terrestrial communications and networking, medical accelerators, and test & measurement setups.

The new X-band amplifiers exhibit high gain and are suited to high-linearity applications operating at frequencies covering 8-12GHz. Gain levels range from 30dB to 41dB over temperatures from -30°C to +70°C. The gain flatness ranges from ±0.50dB to ±1.0dB and the IP3 (third-order intercept point) output performs up to +45dBm.

The new LNA exhibits a competitive noise figure of 2.2dB and the RF power amplifiers are offered in 1W and 4W designs depending on the configuration.

Picture: Fairview's new LNA and high-power X-band amplifiers.

Packaged in hermetically sealed metal enclosures, the performance of the new X-band LNA and power amplifiers is achieved by using hybrid microwave integrated circuit designs and gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology. The connectorized SMA amplifier modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse-bias protection for added reliability. The RF amplifiers have over-voltage protection installed externally for easy repair.

Tags: GaAs pHEMT X-band radar power amplifier LNA

Visit: www.fairviewmicrowave.com/rf-products/