6 February 2015

Arralis launches GaAs pHEMT-based 100GHz MMIC for low-noise amplifiers and medium-power amplifiers

Arralis of Limerick, Ireland has launched the model TU-W1320302 4-stage monolithic microwave integrated circuit (MMIC) device, which is based on pseudomorphic high-electron-mobility transistors (pHEMTs) fabricated on gallium arsenide (GaAs) substrates. Operating over a frequency range of 98-102GHz, it provides better than 5dB noise figure with more than 20dB of stable small-signal gain.

As well as a low-noise amplifier (LNA), the device can also be used as a medium-power amplifier (MPA), supplied to deliver 16dBm of saturated output power. The robust design enables the device to withstand more than 10dBm of input power without damage, negating the need, in most cases, for lossy input-stage protection.

Applications include narrow-bandwidth millimeter-wave imaging; high-resolution radar; sensing; point-to-point (P2P) communications; and short-haul/high-capacity/low-interference links. The firm reckons that the device will be of interest for security applications where passive millimetre-wave imaging has returned to a strong growth cycle.

The 5mmx3mm MMIC die is currently in stock, and packaged versions with a WR10 waveguide interface are also available on a short lead time.

Arralis manufactures a full set of W-band millimetre-wave MMICs, enabling designers to realise complete receiver and transmitter front-ends. In December, the firm announced a contract with the European Space Agency (ESA) for its W-band chipset for a 94GHz radar system.

Tags: GaAs MMIC pHEMT LNAs PAs

Visit: www.arralis.com