27 August 2015

LayTec metrology speeds up process development on 100mm semi-polar (11-22) GaN on r-plane PSS

At the 17th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) in BigSky, Montana, USA (2-7 August), Dr Frank Brunner of FBH (Ferdinand-Braun-Institut für Höchstfrequenztechnik) of Berlin, Germany presented his latest results on the growth of semi-polar (11-22)-oriented gallium nitride (GaN) on r-plane patterned sapphire substrate (r-PSS) in an Aixtron AIX 2600G3-HT metal-organic chemical vapour deposition (MOCVD) reactor (in 8x4"-wafer confiuration).

In his talk 'Large area heteroepitaxial (11-22) - GaN growth', Brunner underlined that cost-efficient growth process optimization for these semi-polar GaN structures on 100mm PSS substrates would not have been possible without comprehensive in-situ metrology. Hence, an EpiCurve TT (for reflectance and wafer bow sensing) and a Pyro 400 (for GaN temperature control) from in-situ metrology system maker LayTec AG of Berlin, Germany were used together by utilizing the two viewports of the (modified) AIX 2600G3-HT reactor top-plate.

Picture: Growth of (11-22) GaN on r-PSS and related in-situ data (F. Brunner et al).

The figure shows how all details of the highly complex growth mode show up in the combined reflectance, wafer bow and temperature data.

Tags: LayTec Metrology FBH Aixtron MOCVD GaN

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