13 June 2013

Northrop Grumman launches 71-76GHz and 81-86GHz GaAs E-band high-power MMICs

Northrop Grumman Corp of Redondo Beach, CA, USA has developed two new 0.1μm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) broadband three-stage high-power amplifiers operating in the E-band communication frequency spectrum.

The APH667 operates at 81-86GHz, and provides 17dB of linear gain and +25.5dBm (0.35W) of saturated output power (typical).

The APH668 operates at 71-76GHz, and provides 19dB of linear gain and +28dBm (0.63W) of saturated output power (typical).

Picture: The APH667 (left) and APH668 (right) E-band GaAs MMIC high-power amplifiers, which allow higher output power levels without combining multiple MMICs.

“Customers typically combine several MMIC products in this frequency band to achieve higher output power,” says Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman Aerospace Systems. “The APH667 and APH668 will allow them to dramatically reduce the number of components required to reach those goals, simplifying the product’s architecture and enhancing the performance,” he adds.

Limited engineering prototype samples of the APH667 and APH668 are available from stock to qualified customers by e-mailing Microelectronic Products and Services at [email protected]. Pre-production quantities will be available in third-quarter 2013, with production quantities available in fourth-quarter 2013.

Tags: Northrop Grumman E-band MMICs

Visit: www.as.northropgrumman.com/mps