4 June 2013

Integra expands portfolio for L-band avionics with two GaN-on-SiC devices

Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band avionics market.

Integra’s IGN1011M675 GaN-on-SiC device.

Intended for commercial avionics applications including IFF Mode S applications, the IGN1011M675 operates over the instantaneous bandwidth covering 1030MHz in the L-band frequency range. Characterized with a pulse train of 2.4ms with 6.4 % LTDC, the IGN1011M675 typically supplies a minimum of 750W of peak output power. The single-ended device provides over 12dB of gain and 50% efficiency.

Integra’s IGN1011M1200 GaN-on-SiC device.

The PN IGN1011M1200 operates over the instantaneous bandwidth covering 1030 MHz in the L-band frequency range. Intended for L-band avionics applications, the single-ended device is characterized under a pulse train of 2.4ms with 6.4 % LTDC and supplies more than 1200W of output power while providing 12dB of gain and 50% efficiency.

Both devices are housed in a ceramic flanged package, providing thermal advantages over plastic-packaged devices.

The IGN1011M675 and IGN1011M1200 will be available for sampling in third-quarter 2013.

Tags: Integra GaN-on-SiC HEMT

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