- News
26 February 2013
RFMD introduces new GaAs- and silicon-based PAs and transmit modules for entry smartphones
Radio-frequency component and compound semiconductor company RF Micro Devices Inc (RFMD) of Greensboro, NC, USA says it is expanding its entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones.
RFMD offers a complete portfolio of GaAs- and silicon-based RF solutions for the entry smartphone segment. The firm's newest entry solutions include GaAs- and silicon-based power amplifiers (PAs) and transmit modules for 2G and 3G entry smartphones, enabling RFMD to deliver complete RF reference designs, from the transceiver to the antenna.
RFMD aims to expand its entry solution product portfolio in calendar 2013 to include fully integrated silicon-based multimode PAs and multimode transmit modules.
The firm’s entry solutions product portfolio is compatible with all leading baseband chipset providers, including Qualcomm, Intel, Broadcom, Mediatek, Spreadtrum and others.
©2006-2013
Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
Today and the editorial material contained within it and related media is
the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
whole or part without permission from Juno Publishing and Media Solutions
Ltd is forbidden. In most cases, permission will be granted, if the magazine
and publisher are acknowledged.