30 September 2011

Riber wins order from China for GaN MBE research reactor

Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, says that it has sold a Compact21 GaN MBE reactor to a State Key Laboratory in China. The system will enable the laboratory to increase its research capabilities for nitride optoelectronic materials and technology design and to develop new industrial applications.

Galium nitride is used to manufacture components for telecoms (mobile phone applications, CATV components) and sustainable energy (high-brightness LEDs, convertors for hybrid vehicles, photovoltaic solar cell components).

Riber says that it has previously commissioned a large number of MBE systems for GaN deposition, and that the new order strengthens its position in the Chinese market and more generally in the Far East, which is the most rapidly expanding region of the compound semiconductor industry.  

Tags: Riber MBE Compact21 GaN

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