12 October 2011

TriQuint launches GaN RF MMIC switches operating at 10-40W and 6-18GHz

In conjunction with European Microwave Week in Manchester, UK (11-13 October), RF front-end product and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched a family of reflective MMIC RF and microwave SPDT (single pole double throw) switches that combine the higher power-handling ability of gallium nitride (GaN) with high speed, low insertion loss, high isolation and broad frequency coverage of DC to 6, 12 or 18GHz. The GaN switches allow designers of defense, aerospace or high-performance commercial systems to use much smaller semiconductor devices in many applications where the only alternative previously was to use larger, heavier electromechanical devices, says the firm. The new devices are also claimed to be the first solid-state solution to handle this much power.

The GaN switch family includes: the TGS2351-SM packaged in a 4mm x 4mm, 24-lead, air-cavity ceramic QFN package, and three die-level switches, the TGS-2351 (DC to 6GHz, 40W CW), the TGS2352 (DC to 12GHz, 20W CW) and the TGS2353 (DC to 18GHz, 10W CW). The TGS2351-SM’s air-cavity ceramic package uses proprietary techniques to offer enhanced protection for the GaN die while also effectively dissipating more heat in a way not achievable with fully encapsulated plastic packaging form factors. Packaged versions of the 12GHz and 18GHz die-level devices are in development.

TriQuint says that GaN has a unique power-handling advantage over GaAs FETs and PIN diodes when employed in switches — GaAs FETs, although solid-state, can handle only a few watts of power, whereas PIN diodes can handle higher power but typically consume more DC energy. In contrast, TriQuint’s HEMT GaN-on-SiC process enables its MMIC switches to handle up to two and a half times more on-state power and eight times more off-state power than a GaAs FET switch fabricated in a typical 0.25µm GaAs process, it is claimed. They do so while consuming minimal current, remaining highly stable over temperature, and delivering performance comparable to or better than that of GaAs FETs or diodes, the firm adds. GaN switches are also orders or magnitude smaller than some electro-mechanical switches.

“TriQuint innovation and GaN product development has led to another break-through device that offers performance advantages in size, weight and power that should be of particular interest to defense and aerospace designers,” says GaN product manager Grant Wilcox. “GaN switches have the potential to shrink the size of the host product and lower its power consumption with performance not previously offered by a solid-state switch solution.”

The new GaN switches are in production and samples are available.

Tags: TriQuint GaN RF MMIC switches GaN

Visit: www.triquint.com