17 November 2011

Aixtron delivers eight further MOCVD systems to Hualei for GaN HB-LEDs

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that, to boost its capacity for gallium nitride (GaN) high-brightness (HB) LEDs, Xiang Nang Hualei Optoelectronics Ltd of Hunan Province, China has ordered eight new metal-organic chemical vapor deposition (MOCVD) reactors: six CRIUS II reactors in 55x2-inch wafer configuration and two AIX G5 HT reactors in 56x2-inch wafer configuration. A local Aixtron service team has installed and commissioned the systems in Hualei’s facility in Chenzhou.

Previously in 2009, Hualei Optoelectronics placed Aixtron’s largest ever single order for MOCVD systems from China at that time, for multiple CRIUS MOCVD systems.

“The acquisition of further Aixtron MOCVD reactors represents another step in our shift away from an earlier reliance on heavy industry towards high-tech,” comments a spokesperson from Hualei Optoelectronics. “Entering the high-brightness LED business was our strategic target and, by working closely with Aixtron, Hualei has achieved its goals quickly and efficiently. Hualei is completely satisfied with the Aixtron Close Coupled Showerhead technology we used in Phase 1 of our GaN HB-LED program, and that is why we will continue to choose Aixtron systems for our next expansion phases,” he adds.

“Aixtron was the first company to install a commercial MOCVD reactor in China and since then we have enjoyed excellent relations with the leading institutes and companies,” notes Dr Bastian Marheineke, VP sales at Aixtron. The repeat order from Hualei “not only reaffirms the ongoing enthusiasm for investment in new technology in China but also reflects the continued trust in Aixtron-based process technology and support,” he adds.

See related items:

LED maker Hualei places Aixtron’s largest ever MOCVD order from China

See: Aixtron Company Profile

Tags: Aixtron MOCVD GaN HB-LEDs

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