4 January 2011

M/A-COM Tech launches 250–4000MHz highly linear RF driver amplifier

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched the MAAM-009560, a heterojunction bipolar transistor (HBT) driver amplifier for cellular and WiMAX infrastructure applications.

The driver amplifier covers a broad frequency range of 250–4000MHz with linearity of 42dBm output IP3 over a greater than 20dB input power range. Typical gain is 15dB. Just last month, M/A-COM Tech launched the MAAM-009563 two-stage HBT driver amplifier, covering frequencies of 250–3000MHz with linearity of 47dBm OIP3 and typical gain of 19.5dB.

The lead-free SOT-89 surface-mount plastic package is RoHS compliant and compatible with solder reflow temperatures up to 260ºC. The ESD susceptibility achieves a class 2 ESD rating.

“This versatile MAAM-009560 HBT driver amplifier delivers high-linearity performance while consuming low power, providing a highly efficient driver amplifier solution for cellular and WiMAX base stations,” says product manager Jack Redus.

In addition to driver amplifiers, M/A-COM Tech provides a variety of low-noise amplifiers, switches, attenuators, and synthesizers for infrastructure applications.
Engineering samples, sample boards and production devices are available from stock.

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M/A-COM Tech launches 250–3000MHz highly linear RF driver amplifier

Tags: M/A-COM Technology HBT RF driver amplifier

Visit: www.macomtech.com