- News
10 February 2011
Epistar JV Epicrystal to speed expansion with five Aixtron UHB GaN LED systems
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has received a new order for five AIX 2800G4 HT MOCVD reactors from Epicrystal Corporation (Changzhou) Ltd in China, a joint venture formed last year between Taiwan’s biggest LED chipmaker Epistar and its customers for manufacturing and distributing LED-based products.
Following delivery in second-quarter 2011 and commissioning by the local Aixtron support team working with a technical team from Epistar at the new purpose-built facility in Changzhou City, Jiangsu Province, east China (which broke ground last April), the reactors will be used for the production of ultra-high-brightness (UHB) GaN-based LEDs.
“While we are a new company registered in China and in the first phase of our capacity expansion, we rely on the excellent record with respect to device performance and yield obtainable from Aixtron systems through Epistar," says Epicrystal’s president Easy Hwang. “The proven process compatibility and transferability from one Planetary MOCVD system to another will enable us to complete the ramp up of EpiCrystal’s production capacities in a very short time,” he adds. “The Aixtron MOCVD systems clearly demonstrate its competitiveness in terms of cost of ownership and productivity,” Hwang continues. “This partnership will help provide the tools we need, as the characteristics of the AIX 2800G4 HT will ensure that our productivity goals will be met.”
Aixtron MOCVD AIX 2800G4 HT Epistar GaN LEDs
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