News

10 November 2010

 

RFMD adds high-linearity differential IF mixers to Multi-Market Product catalog

RF Micro Devices Inc of Greensboro, NC, USA has expanded its RF component catalog to include two new high-linearity differential IF mixers: the RFMX0015 and RFMX1015. Both are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems.

The firm says that increasing deployment of 3G and LTE wireless systems is spurring demand for very high-linearity down-converters (with IIP3 > 28dBm). The RFMX0015 and RFMX1015 feature a passive gallium arsenide mixer core that delivers high linearity. When combined with the GaAs heterojunction bipolar transistor (HBT) intermediate-frequency (IF) amplifier, the combination provides what is claimed to be an industry-leading IIP3/DC current figure of merit (29dBm/200mA) for a down-conversion differential IF mixer with 7dB gain and 0dBm LO drive.

The RFMX0015 and RFMX1015 operate in the standard cellular bands of 600–1050MHz and 1500–2200MHz, respectively, and support both high- and low-side LO injection for IF frequencies up to 300MHz. In addition, the mixers feature an IF bias pin that enables users to reduce the DC current to save power when peak linearity performance is not required.

RFMD is showcasing its portfolio of RF components at this week’s electronica 2010 trade show in Munich, Germany (9–12 November).

Search: RFMD Differential IF mixers GaAs HBT

Visit: www.rfmd.com

For more: Latest issue of Semiconductor Today