News

6 July 2010

 

Silan ramps GaN UHB-LED wafer production with order for six Aixtron CRIUS II MOCVD systems

In Q2/2010, Hangzhou Silan Microelectronics Co Ltd (Silan) of Hangzhou, PR China ordered six CRIUS II 55x2-inch configuration MOCVD systems from Aixtron AG of Aachen-Herzogenrath, Germany, to be delivered between Q4/2010 and Q1/2011. The systems will be used for volume production of gallium nitride (GaN) ultra-high brightness (UHB) blue/green LEDs.

“We are looking to carry out a major capacity increase for our nitride LED wafers so naturally we turned to Aixtron. Their new generation CRIUS II systems have demonstrated major improvements such as higher growth rates, high pressure growth and the more than doubling of productivity. Therefore, I am convinced that the CRIUS II will meet our need for process flexibility, uniformity in thickness, doping, and composition,” said Jiang Zhongyong, general manager Silan Azure.

“Aixtron's next generation CRIUS II Close Coupled Showerhead (CSS) system offers customers fastest time to production and minimized maintenance based on proven technology,” says Tony Pearce, managing director of Aixtron Ltd. “The CRIUS II will be delivered with the ARGUS multi-channel pyrometer allowing real-time surface temperature measurement and analysis that enables to monitor the thermometric distribution across the whole of the MOCVD growth surface in the CCS system.”

Hangzhou Silan Microelectronics is primarily engaged in the development and manufacture of integrated circuits, LED products, and other electronic components. Its main products include digital audio and video ICs, power management ICs, LED drivers, and DC motor drivers.

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