News

19 August 2010

 

Aixtron MOCVD R&D reactor to form hub of INCT-DISSE materials project at University of Rio de Janeiro

Deposition equipment maker Aixtron AG of Aachen-Herzogenrath, Germany says that it has received a new order for an AIX 200, 1x2”-configuration MOCVD reactor from the Pontificial Catholic University of Rio de Janeiro (PUC-Rio) in Brazil, for delivery and installation at its Semiconductor Laboratory (LabSem).

Materials to be grown are indium phosphide (InP) and gallium arsenide (GaAs) based quantum well and quantum dot structures. Applications cover site control of quantum dot nucleation, photonic crystals, lasers, photodetectors, solar cells, fundamental properties of quantum dots, superlattices and microcavities.

“Recent funding means we can update our facilities, and top of the list is a new MOVPE reactor,” says coordinator and leader of the technology-research mission, professor Patrícia Lustoza de Souza. “It was logical that we pick an AIX 200, partly because we already have one but mostly because of its versatility.... This existing AIX 200 has been running for almost two decades, proving the quality of the equipment,” she adds. “Over the years we have also developed a close working relationship with Aixtron personnel.”

The new reactor will enable LabSem to grow semiconductor samples not only for its members but also for other groups within the country and abroad wishing to collaborate or source from it, de Souza comments.

The Brazilian Government recently created the National Science and Technology Institute for Semiconductor Nanodevices (INCT-DISSE), involving several Brazilian research groups and its headquarters at LabSem. With membership including more than 20 researchers at eight institutions with long experience in specific areas, DISSE carries out applied and basic research in III-V electronic and optoelectronic devices.

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